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Isolator

隔离器件

系列命名规则

NSI naming rule

双通道数字隔离器 NSI822x-Q1

  • Up to 5000Vrms Insulation voltage
  • Date rate: DC to 150Mbps
  • Power supply voltage: 2.5V to 5.5V
  • All devices are AEC-Q100 qualified
  • High CMTI: 250kV/us
  • Chip level ESD: HBM: ±8kV
  • Robust EMC Reinforced Dual-Channel Digital Isolators for SOW8 wide body and SOW16 wide body
  • Default output high level or low-level option
  • Isolation surge voltage: >10kV
  • Low power consumption: 1.5mA/ch (1 Mbps)
  • Low propagation delay: <15ns
  • Operation temperature: -40℃~125℃
  • RoHS-compliant packages:
    • SOP8 narrow body
    • SOW8 wide body
    • SOW16 wide body

NSI822x

三通道数字隔离器 NSI823x-Q1

  • Up to 5000Vrms Insulation voltage
  • Date rate: DC to 150Mbps
  • Power supply voltage: 2.5V to 5.5V
  • AEC-Q100 Grade 1 available for all devices
  • High CMTI: 250kV/us
  • Chip level ESD: HBM: ±8kV
  • Robust Electromagnetic Compatibility (EMC)
  • – System-Level ESD, EFT, and Surge Immunity
  • – Low Emissions
  • Default output high level or low-level option
  • Isolation barrier life: >60 years
  • Low power consumption: 1.5mA/ch (1 Mbps)
  • Low propagation delay: <15ns
  • Operation temperature: -40℃~125℃
  • RoHS-compliant packages:
  • – SOP16(300mil)

NSI823x

四通道数字隔离器 NSI824x-Q1

  • Up to 5000Vrms Insulation voltage
  • Date rate: DC to 150Mbps
  • Power supply voltage: 2.5V to 5.5V
  • AEC-Q100 Grade 1 available for all devices
  • High CMTI: 250kV/us
  • Chip level ESD: HBM: ±8kV
  • Robust Electromagnetic Compatibility (EMC)
  • – System-Level ESD, EFT, and Surge Immunity
  • – Low Emissions
  • Default output high level or low-level option
  • Isolation barrier life: >60 years
  • Low power consumption: 1.5mA/ch (1 Mbps)
  • Low propagation delay: <15ns
  • Operation temperature: -40℃~125℃
  • RoHS-compliant packages:
  • – SOP16(300mil)
  • – SSOP16

NSI824x

六通道数字隔离器 NSI826x-Q1

  • Up to 5000Vrms Insulation voltage
  • Date rate: DC to 150Mbps
  • Power supply voltage: 2.5V to 5.5V
  • High CMTI: 200kV/us
  • Chip level ESD: HBM: ±8kV
  • High system level EMC performance:
    • Enhanced system level ESD, EFT, Surge immunity
  • Default output high level or low level option
  • Isolation barrier life: >60 years
  • Low power consumption: 1.5mA/ch (1 Mbps)
  • Low propagation delay: <15ns
  • Operation temperature: -40℃~125℃
  • RoHS-compliant packages:
    • SOP16(300mil)

NSI826x